The C4H22P400A from Ampleon is a GaN Asymmetric Doherty Power Transistor that operates from 1.8 to 2.2 GHz. It delivers an output power of 400 W with a power gain of 16 dB and a drain efficiency of 60.1%. This transistor has an adjacent channel power ratio (ACPR) of -30 dBc with exceptional pre-distortion capability. It has lower output capacitance for improved performance in Doherty applications and is internally matched to 50 Ohms for ease of use. This RF transistor requires a drain-source voltage of 48 V and consumes 80 mA of quiescent drain current. It is available in an SMT plastic package and is ideal for base stations and multi-carrier applications.
