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CLF3H0035S-100

RF Transistor by Ampleon (325 more products)
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The CLF3H0035S-100 from Ampleon is a RF Transistor with Frequency DC to 3.5 GHz, Power 50 dBm (PL1dB), Power(W) 100 W (PL1dB), Power Gain (Gp) 14 to 15 dB, Input Return Loss 8 to 12 dB. Tags: Flanged. More details for CLF3H0035S-100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CLF3H0035S-100
  • Manufacturer
    Ampleon
  • Description
    100 W GaN HEMT from DC to 3.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN
  • Application Type
    CW and Pulsed Applications
  • Application
    General Purpose
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 3.5 GHz
  • Power
    50 dBm (PL1dB)
  • Power(W)
    100 W (PL1dB)
  • Pulsed Width
    100 us
  • Power Gain (Gp)
    14 to 15 dB
  • Input Return Loss
    8 to 12 dB
  • Class
    AB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Current
    300 mA
  • Gate Leakage Current (Ig)
    140 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • Package
    Thermally Enhanced
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    PL(3dB): 118 W, Package Name: CLF3H0035-100 (SOT467C), CLF3H0035S-100 (SOT467B)

Technical Documents
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