Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors with an output power of 30 Watts (CLF3H0060(S)-30), and 100 Watts (CLF3H0035(S)-100). These high linearity devices are the initial products from their Generation 3 GaN-SiC HEMT process that has been recently qualified and released to production.
The devices offer broadband high linearity features under low bias settings to raise the performance levels for broadband linearity (under -32 dBc third-order intermodulation products at 5 dB, and less than -42 dBc at 8 dB back-off from saturated power over a 2:1 bandwidth). Broadband linearity is vital for frequency-agile radios deployed in today’s defense electronics for handling multi-mode communication waveforms (from FM through high-order QAM signals) with simultaneous application of countermeasure channels. These demanding applications require transistors with inherently better broadband linearity. Based on market feedback, the Ampleon Generation 3 GaN-on-SiC HEMT transistors meet these extended broadband linearity requirements.
In addition, the Generation 3 transistors are housed in a thermally enhanced package, which enables reliable operation and offers an extremely rugged VSWR withstand capability of up to 15:1 for a 30 Watt device. The ruggedness extends to Class A operation, common to instrumentation applications with saturated gate conditions while maintaining linearity over a wide dynamic range at extended frequency ranges. Ampleon’s Generation- 3 GaN-on-SiC HEMT transistors set a new standard for high linearity GaN technology for broadband applications while maintaining excellent thermal and ruggedness features.
Click here to learn more about GaN-on-SiC technology.
Click here to learn more about CLF3H0060S-30.
Click here to learn more about CLF3H0035S-100.
