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BCF030T

RF Transistor by BeRex, Inc. (27 more products)
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The BCF030T from BeRex, Inc. is a RF Transistor with Frequency DC to 26.5 GHz, Power 21.7 dBm, Power(W) 0.15 W, P1dB 19 dBm, Gain 8.9 to 13.5 dB. Tags: Chip. More details for BCF030T can be seen below.

Product Specifications

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Product Details

  • Part Number
    BCF030T
  • Manufacturer
    BeRex, Inc.
  • Description
    HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)

General Parameters

  • Transistor Type
    MESFET
  • Technology
    GaAs
  • Application Industry
    Test & Measurement, Aerospace & Defence, Commercial
  • Application
    Military
  • CW/Pulse
    CW
  • Frequency
    DC to 26.5 GHz
  • Power
    21.7 dBm
  • Power(W)
    0.15 W
  • P1dB
    19 dBm
  • Gain
    8.9 to 13.5 dB
  • Noise Figure
    1.45 dB
  • Transconductance
    35 to 50 mS
  • Supply Voltage
    6 to 8 V
  • Breakdown Voltage
    -15 to -11 V (Drain Breakdown Voltage), -10 to -7 V (Source Breakdown Voltage)
  • Drain Bias Current
    60 to 120 mA (Saturated)
  • Thermal Resistance
    120 C/W
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -60 to 150 Degree C

Technical Documents
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