The BCG008 from BeRex is a GaN Power HEMT Die that is suited for amplifier applications from DC to 26 GHz. At a 12 GHz test frequency, it delivers a saturated output power of 8 W (~39 dBm) with a gain of more than 8 dB and power-added efficiency (PAE) of 72%. This GaN-based transistor has been developed using state-of-the-art metallization with SI3N4 passivation and is screened for reliability. It has a nominal 0.15-micron gate length and 1250 micron gate width. The BCG008 can be used for wide-band and narrow-band applications. It is ideal for commercial, military/high-reliability, and test & measurement applications.
