CGHV14800

RF Transistor by MACOM (309 more products)

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CGHV14800 Image

The CGHV14800 from MACOM is a GaN HEMT that operates from 1.2 GHz to 1.4 GHz. The transistor provides more than 800 W of output power with a gain of 16 dB and efficiency of 65% . It requires a DC supply of 50 V and is matched to 50 ohms at the input and output. The CGHV14800 is available in a ceramic/metal flange and pill package and is ideal for pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radars, weather radars, penetration radars, and antimissile system radars.

Product Specifications

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Product Details

  • Part Number
    CGHV14800
  • Manufacturer
    MACOM
  • Description
    800-W, 1200 to 1400-MHz, GaN HEMT for L-Band Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    58.75 to 59.6 dBm
  • Power(W)
    912.01 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.05
  • Small Signal Gain
    14 dB
  • VSWR
    9.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    800 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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