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RD12MVS1

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The RD12MVS1 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 175 MHz, Power 40.61 dBm, Power(W) 11.51 W, Supply Voltage 7.2 V, Input Power 1 W. Tags: Flanged. More details for RD12MVS1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD12MVS1
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 175 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    VHF Band, Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    DC to 175 MHz
  • Power
    40.61 dBm
  • Power(W)
    11.51 W
  • Supply Voltage
    7.2 V
  • Input Power
    1 W
  • Drain Efficiency
    0.55
  • Package Type
    Flanged
  • RoHS
    Yes

Technical Documents
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