Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Mitsubishi Electric US, Inc..
The RD12MVS1 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 175 MHz, Power 40.61 dBm, Power(W) 11.51 W, Supply Voltage 7.2 V, Input Power 1 W. Tags: Flanged. More details for RD12MVS1 can be seen below.
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.
