The GTRA384802FC from MACOM is a high power GaN on SiC HEMT transistor that operates from 3600 to 3800 MHz. It provides an output power up to 400 W with gain of 13.7 dB and efficiency of 62%. The transistor requires a 48 V power supply and is available in a thermally enhanced package with earless flange. It is ideal for multi-standard cellular power amplifier applications.
