The GT010D from Gallium Semiconductor is a GaN-on-SiC HEMT that operates from DC to 8 GHz. It delivers a saturated output power of 15 W with a gain of up to 18.5 dB and a maximum drain efficiency of 64%. This transistor supports both linear and pulsed mode operations. It is available in a surface-mount plastic DFN package that measures 6 x 3 mm and requires a DC supply of 50 V. The transistor is ideal for use in cellular infrastructure, radar, communications, and test instrumentation applications.
