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GT065D

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The GT065D from Gallium Semiconductor is a RF Transistor with Frequency DC to 3.2 GHz, Power 49.03 dBm, Power(W) 79.98 W, Saturated Power 62 to 80 W, Duty_Cycle 0.1. Tags: Surface Mount. More details for GT065D can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT065D
  • Manufacturer
    Gallium Semiconductor
  • Description
    80 W, GaN on SiC HEMT from DC to 3.2 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN, GaN on SiC
  • Application Industry
    Radar, Test & Measurement, Communication, Wireless Infrastructure
  • Application
    Cellular, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 3.2 GHz
  • Power
    49.03 dBm
  • Power(W)
    79.98 W
  • Saturated Power
    62 to 80 W
  • Pulsed Width
    100 uSec
  • Duty_Cycle
    0.1
  • Gain
    15.1 to 17.2 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -3.5 to -1.5 VGS (V)
  • Breakdown Voltage
    150 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Drain Leakage Current (Id)
    0.78 mA
  • Quiescent Drain Current
    80 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Voltage Rating
    55 V
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimension
    6x3 mm
  • RoHS
    Yes
  • Grade
    Commercial, Military, Space
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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