The GTH2r-1014150S from Gallium Semiconductor is a GaN-on-SiC HEMT that operates from 1.0 to 1.4 GHz. It delivers a saturated output power of 150 W (~51.73 dBm) with a gain of 15.7 dB and a drain efficiency of 72.7%. This HEMT requires a DC supply of 50 V and consumes 200 mA of current. It is available in a surface-mount plastic DFN package that measures 6.5 x 7.0 mm and is ideal for radar, avionics, satellite communications and pulse applications.
