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IB1011L470

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The IB1011L470 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 56.72 to 58.22 dBm, Power(W) 663.74 W, Gain 10.2 dB, Power Gain (Gp) 9.73 to 11.23 dB. Tags: Flanged. More details for IB1011L470 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1011L470
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 10.2 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    56.72 to 58.22 dBm
  • Power(W)
    663.74 W
  • Peak Output Power
    470 W
  • Pulsed Width
    32 to 48 us
  • Gain
    10.2 dB
  • Power Gain (Gp)
    9.73 to 11.23 dB
  • Supply Voltage
    48 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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