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IB1214M150

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The IB1214M150 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.215 to 1.4 GHz, Power 51.76 dBm, Power(W) 149.97 W, Duty_Cycle 0.1, Gain 8.1 dB. Tags: Flanged. More details for IB1214M150 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1214M150
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1200 to 1400 MHz, 8.1 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.215 to 1.4 GHz
  • Power
    51.76 dBm
  • Power(W)
    149.97 W
  • Peak Output Power
    150 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    8.1 dB
  • Power Gain (Gp)
    7.4 to 15 dB
  • Supply Voltage
    40 V
  • Input Power
    27.3 W
  • Breakdown Voltage
    75 V (Collector Emmiter)
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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