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  6. A2G35S200-01S

The A2G35S200-01S from NXP Semiconductors is a RF Transistor with Frequency 3.4 to 3.6 GHz, Power 46.02 dBm, Power(W) 39.99 W, Duty_Cycle 0.1, Power Gain (Gp) 14.3 to 17.4 dB. Tags: Flanged. More details for A2G35S200-01S can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2G35S200-01S
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, 3G / WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    3.4 to 3.6 GHz
  • Power
    46.02 dBm
  • Power(W)
    39.99 W
  • CW Power
    180 to 205 W
  • Pulsed Power
    126 to 153 W
  • Pulsed Width
    12 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    14.3 to 17.4 dB
  • VSWR
    10.00:1
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.8 to -2.3 Vdc
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 Vdc
  • Drain Efficiency
    0.3529
  • Drain Current
    291 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.3 °C/W
  • Package Type
    Flanged
  • Package
    NI--400S--2S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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