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IB1416S650

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The IB1416S650 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.45 to 1.55 GHz, Power 58.13 dBm, Power(W) 650.13 W, Duty_Cycle 0.01, Gain 8.3 dB. Tags: Flanged. More details for IB1416S650 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1416S650
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1450 to 1550 MHz, 8.28 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.45 to 1.55 GHz
  • Power
    58.13 dBm
  • Power(W)
    650.13 W
  • Peak Output Power
    600 W
  • Pulsed Width
    8 us
  • Duty_Cycle
    0.01
  • Gain
    8.3 dB
  • Power Gain (Gp)
    8 to 10 dB
  • Supply Voltage
    50 V
  • Input Power
    65 to 103 W
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Drain Efficiency
    0.4
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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