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IB2729M170

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The IB2729M170 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 2.9 GHz, Power 52.3 to 53.98 dBm, Power(W) 250.03 W, Duty_Cycle 0.1, Gain 9.5 dB. Tags: Flanged. More details for IB2729M170 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB2729M170
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2700 to 2900 MHz, 9.5 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 2.9 GHz
  • Power
    52.3 to 53.98 dBm
  • Power(W)
    250.03 W
  • Peak Output Power
    170 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    9.5 dB
  • Supply Voltage
    36 V
  • Breakdown Voltage
    70 V (Collector Emmiter)
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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