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IB2856S65

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The IB2856S65 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.856 GHz, Power 48.13 to 49.64 dBm, Power(W) 92.04 W, Duty_Cycle 0.03, Gain 10.9 dB. Tags: Flanged. More details for IB2856S65 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB2856S65
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2.856 GHz, Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    ISM
  • Application
    ISM Band, Medical
  • CW/Pulse
    Pulse
  • Frequency
    2.856 GHz
  • Power
    48.13 to 49.64 dBm
  • Power(W)
    92.04 W
  • Peak Output Power
    65 W
  • Pulsed Width
    12 us
  • Duty_Cycle
    0.03
  • Gain
    10.9 dB
  • Power Gain (Gp)
    10.35 to 11.85 dB
  • Supply Voltage
    40 V
  • Breakdown Voltage
    70 V (Collector Emmiter)
  • Drain Efficiency
    0.5
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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