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IB3134M70

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The IB3134M70 from Integra Technologies, Inc. is a RF Transistor with Frequency 3.1 to 3.4 GHz, Power 48.45 dBm, Power(W) 69.98 W, Duty_Cycle 0.1, Gain 8.2 dB. Tags: Flanged. More details for IB3134M70 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB3134M70
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3100 to 3400 MHz, 8.2 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.4 GHz
  • Power
    48.45 dBm
  • Power(W)
    69.98 W
  • Peak Output Power
    70 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    8.2 dB
  • Supply Voltage
    36 V
  • Breakdown Voltage
    70 V (Collector Emmiter)
  • Drain Efficiency
    0.38
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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