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IGN0110UM100

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The IGN0110UM100 from Integra Technologies, Inc. is a RF Transistor with Frequency 100 MHz to 1 GHz, Power 50 dBm, Power(W) 100 W, Gain 12.5 dB, Power Gain (Gp) 12 to 16 dB. Tags: Flanged. More details for IGN0110UM100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN0110UM100
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    100 to 1000 MHz, 12 dB GaN Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast, Radar
  • Application
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    100 MHz to 1 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Gain
    12.5 dB
  • Power Gain (Gp)
    12 to 16 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.5 V
  • Input Power
    2.5 to 6.3 W
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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