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IGN0160UM12

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The IGN0160UM12 from Integra Technologies is a GaN on SiC RF Transistor that operates from 0.1 to 6 GHz. The amplifier has been specified for use under class AB operation and provides an output power of more than 12 watts with a power gain of 17 dB. The amplifier requires a 50 V power supply. It is available in a metal based package sealed with Ceramic-Epoxy Lid and is ideal for Broadband applications.

Product Specifications

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Product Details

  • Part Number
    IGN0160UM12
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    High Power Broadband GaN Transistor from 0.1 to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    General Purpose
  • CW/Pulse
    CW
  • Frequency
    0.1 to 6 GHz
  • Power
    40.79 dBm
  • Power(W)
    12 W
  • Power Gain (Gp)
    16 to 19 dB
  • Input Return Loss
    9 to 20 dB
  • VSWR
    2.1:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Leakage Current (Id)
    1.2 mA
  • Junction Temperature (Tj)
    -55 to 200 Degrees C
  • Package Type
    Flanged
  • Storage Temperature
    -55 to 150 Degrees C

Technical Documents
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