1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IGN0912L250

IGN0912L250

Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IGN0912L250 Image

The IGN0912L250 from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.22 GHz, Power 53.98 dBm, Power(W) 250.03 W, Duty_Cycle 0.227, Gain 15 dB. Tags: Flanged. More details for IGN0912L250 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN0912L250
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    960 MHz to 1.22 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    CW
  • Frequency
    960 MHz to 1.22 GHz
  • Power
    53.98 dBm
  • Power(W)
    250.03 W
  • Pulsed Width
    444 X (7µs ON, 6µs OFF)
  • Duty_Cycle
    0.227
  • Gain
    15 dB
  • Power Gain (Gp)
    15 to 17 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    8 W
  • Quiescent Drain Current
    45 to 55 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View similar products