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IGN0912L250M

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The IGN0912L250M from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.22 GHz, Power 53.98 dBm, Power(W) 250.03 W, Duty_Cycle 0.227, Gain 18 dB. Tags: Flanged. More details for IGN0912L250M can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN0912L250M
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    960 MHz to 1.22 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.22 GHz
  • Power
    53.98 dBm
  • Power(W)
    250.03 W
  • Pulsed Width
    444 X (7µs ON, 6µs OFF)
  • Duty_Cycle
    0.227
  • Gain
    18 dB
  • Power Gain (Gp)
    17 to 19 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.6 V
  • Input Power
    5 W
  • Quiescent Drain Current
    45 to 55 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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