The IGN1011L120 from Integra is a high power GaN transistor that operates from 1.03 to 1.09 GHz. This Class AB transistor supplies more than 120 Watts of peak pulse power, at 50V bias voltage and 6.4% duty factor. It is assembled via chip and wire technology, utilizing gold metallization and is housed in a metal-based package that measures 20.32 x 10.16 mm, sealed with a ceramic-epoxy lid. This GaN transistor is best suited for L-band radar applications.
