IGN1012S2500

The IGN1012S2500 from Integra Technologies is an RF Transistor that operates in the L-band. It delivers an output power of 2.5 kW and requires a DC supply of 100 V. This transistor utilizes Integra’s 3rd generation RF GaN technology that is optimized to deliver high power and efficiency in a single package while maintaining reliable operating junction temperatures. It also combines Integra’s patented thermal enhancement strategies and transistor design expertise to offer a reliable operation with an MTTF of 10 million hours. This RF transistor is ideal for directed energy applications.