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IGN1012S30

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The IGN1012S30 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.025 to 1.150 GHz, Power 44.77 dBm, Power(W) 29.99 W, Duty_Cycle 0.02, Gain 19 dB. Tags: Flanged. More details for IGN1012S30 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN1012S30
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.025 to 1.150 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.025 to 1.150 GHz
  • Power
    44.77 dBm
  • Power(W)
    29.99 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Gain
    19 dB
  • Power Gain (Gp)
    17.5 to 21 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.5 V
  • Input Power
    0.4 W
  • Quiescent Drain Current
    18 to 22 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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