The IGN1030S5000 from Integra Technologies is a GaN-on-SiC Power Transistor that operates at 1030 MHz. It delivers an output power of more than 5000 W (32 µs, 4% duty cycle pulse conditions) with a gain of 19 dB and has a drain efficiency of 73%. This RoHS-compliant, pre-matched power transistor requires a DC supply of 125 V and consumes less than 156 A of drain current. It is available in a metal-based package that measures 1.265 x 0.395 inches with an epoxy-sealed ceramic lid to optimize thermal efficiency. This REACH-compliant transistor is ideal for transponder uplink/downlink and L-band avionics IFF/SSR system applications.
