The IGN1214L500B from Integra Technologies is a GaN L-Band Radar Transistor that operates from 1.2 to 1.4 GHz. This GaN on SiC HEMT transistor provides an output power of over 500 watts with a pulse width of 2 ms and a duty cycle of 20%. The transistor provides a power gain of 15 dB with an efficiency of 65% while operating from a 50 V supply. It is available in a metal-based package with a sealed ceramic epoxy lid.
