The IGN2425S1500 from Integra Technologies is a GaN-on-SiC Power Transistor that operates from 2.4 to 2.5 GHz. It delivers an output power of more than 1500 W (50 µs, 1% duty cycle pulse conditions) with a gain of 15 dB and has a drain efficiency of 65%. This RoHS-compliant, pre-matched power transistor requires a DC supply of 100 V and consumes less than 48 A of drain current. It is available in a metal-based package that measures 0.795 x 0.395 x 0.143 inches with an epoxy-sealed ceramic lid to optimize thermal efficiency. This REACH-compliant transistor is ideal for medical applications.
