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IGN2856S500

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The IGN2856S500 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.856 GHz, Power 56.99 dBm, Power(W) 500.03 W, Duty_Cycle 0.03, Gain 11.8 dB. Tags: Flanged. More details for IGN2856S500 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN2856S500
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2.856 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    ISM
  • Application
    ISM Band, Medical
  • CW/Pulse
    Pulse
  • Frequency
    2.856 GHz
  • Power
    56.99 dBm
  • Power(W)
    500.03 W
  • Pulsed Width
    12 us
  • Duty_Cycle
    0.03
  • Gain
    11.8 dB
  • Power Gain (Gp)
    11 to 13 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    30 to 45 W
  • Breakdown Voltage
    70 V (Collector Emmiter)
  • Quiescent Drain Current
    90 to 110 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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