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IGN2998S500

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The IGN2998S500 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.998 GHz, Power 56.99 to 58.45 dBm, Power(W) 699.84 W, Duty_Cycle 0.01, Gain 12 dB. Tags: Flanged. More details for IGN2998S500 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN2998S500
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2998 MHz, 12.6 dB GaN Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    ISM
  • Application
    ISM Band, Medical
  • CW/Pulse
    Pulse
  • Frequency
    2.998 GHz
  • Power
    56.99 to 58.45 dBm
  • Power(W)
    699.84 W
  • Pulsed Width
    8 us
  • Duty_Cycle
    0.01
  • Gain
    12 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    34 W
  • Quiescent Drain Current
    100 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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