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IGN4450M90

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The IGN4450M90 from Integra Technologies, Inc. is a RF Transistor with Frequency 4.4 to 5 GHz, Power 39.54 dBm, Power(W) 8.99 W, Duty_Cycle 0.1, Gain 12.1 dB. Tags: Flanged. More details for IGN4450M90 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN4450M90
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    4400 to 5000 MHz, 13 dB GaN Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    C Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    4.4 to 5 GHz
  • Power
    39.54 dBm
  • Power(W)
    8.99 W
  • Peak Output Power
    90 to 143 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    12.1 dB
  • Power Gain (Gp)
    12.55 to 14.56 dB
  • Supply Voltage
    36 V
  • Threshold Voltage
    -3.5 V
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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