The IGT1112M90 from Integra is an X-Band Radar Transistor that operates from 10.8 to 11.8 GHz. This GaN-on-SiC RF power transistor supplies more than 90 watts of peak output power under 150µs, 10% duty cycle pulse conditions, with an associated 11 dB of gain and 43% efficiency. It operates from a 50 V supply voltage. The transistor is housed in a metal-based package with epoxy sealed ceramic lid and is best suited for X-band radar applications.
