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IGT2735M30

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The IGT2735M30 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 3.5 GHz, Power 34.77 dBm, Power(W) 3 W, Duty_Cycle 0.1, Gain 12 dB. Tags: Flanged. More details for IGT2735M30 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGT2735M30
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2.7 to 3.5 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.5 GHz
  • Power
    34.77 dBm
  • Power(W)
    3 W
  • Peak Output Power
    30 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    12 dB
  • Power Gain (Gp)
    10 to 13 dB
  • Supply Voltage
    32 V
  • Threshold Voltage
    -3.5 V
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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