The IGT8994M50 from Integra RF Power Devices is an X-band GaN-on-SiC RF Power Transistor that operates from 8.9 to 9.4 GHz. It delivers a saturated output power of more than 50 W with a gain of 10 dB and drain efficiency of 38%. The transistor has a pulse width of 200 µs with a duty cycle of 10%. It requires a supply voltage of 50 V. The transistor is available in a metal-based package with an epoxy sealed ceramic lid that measures 0.689 x 0.949 x 0.215 inches and is ideal for use in X-band radar applications.
