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ILD0912M150HV

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The ILD0912M150HV from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 51.76 to 53.26 dBm, Power(W) 211.84 W, Duty_Cycle 0.1, Gain 13 dB. Tags: Flanged. More details for ILD0912M150HV can be seen below.

Product Specifications

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Product Details

  • Part Number
    ILD0912M150HV
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    960 to 1215 MHz, 8.8 dB LDMOS Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    51.76 to 53.26 dBm
  • Power(W)
    211.84 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Gain
    13 dB
  • Power Gain (Gp)
    12.73 to 14.23 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    2 to 4 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 200 Degree C

Technical Documents
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