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ILD1011M275HV

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The ILD1011M275HV from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 54.39 to 55.89 dBm, Power(W) 388.15 W, Duty_Cycle 0.02, Gain 14.9 dB. Tags: Flanged. More details for ILD1011M275HV can be seen below.

Product Specifications

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Product Details

  • Part Number
    ILD1011M275HV
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.03 to 1.09 GHz, LDMOS Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    54.39 to 55.89 dBm
  • Power(W)
    388.15 W
  • Pulsed Width
    50 us
  • Duty_Cycle
    0.02
  • Gain
    14.9 dB
  • Power Gain (Gp)
    14.4 to 15.9 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    2.5 to 10 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Efficiency
    0.4
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 200 Degree C

Technical Documents
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