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ILD1214M10

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The ILD1214M10 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 40 to 43.98 dBm, Power(W) 25 W, Duty_Cycle 0.1, Gain 13.2 dB. Tags: Flanged. More details for ILD1214M10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ILD1214M10
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1200 to 1400 MHz, 13.2 dB LDMOS Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    40 to 43.98 dBm
  • Power(W)
    25 W
  • Peak Output Power
    10 to 15 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    13.2 dB
  • Power Gain (Gp)
    10 to 14 dB
  • Supply Voltage
    30 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    2.5 to 4 V
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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