The CG2H40010P from MACOM is a GaN High Electron Mobility Transistor (HEMT) that operates from DC to 8 GHz. It delivers an output power of 10 W with a small signal gain of more than 15 dB and a drain efficiency of 70%. This transistor requires a DC supply of 28 V and is suitable for linear and compressed amplifier circuits. It is available in both screw-down, flange, and solder-down, pill packages and is ideal for use in 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and Class A, AB, linear amplifiers (for OFDM, W-CDMA, EDGE, CDMA waveforms).
