The CG2H40035 from MACOM is a GaN High Electron Mobility Transistor (HEMT) that operates from DC to 6 GHz. It provides a saturated output power of 40 W with a small signal gain of 14.3 dB, an efficiency of 64% and requires a 28 V supply. This transistor is available in both a screw-down, flange package and solder-down, pill package and is suitable for applications such as 2-Way Private Radio, Broadband Amplifiers, Cellular Infrastructure, Test Instrumentation, and Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms.
