The CG2H80030D from MACOM is a GaN HEMT (high-electron-mobility transistor) that operates from DC to 8 GHz. This transistor provides an output power of 30 Watts with a gain 12 dB and efficiency over 65%. It requires a supply voltage of 28 Volts and has high breakdown voltage of 84 V. This transistor is available as a bare die and is ideal for use in 2-way private radios, broadband amplifiers, cellular infrastructure and test instrumentation applications.
