PXAC192908FV

RF Transistor by MACOM (309 more products)

Note : Your request will be directed to MACOM.

The PXAC192908FV from MACOM is an RF LDMOS FET that operates from 1930 to 1995 MHz. It provides a peak output power of 240 Watts with a gain of 14 dB and drain efficiency of 54%, while operating at 1990 MHz. The device is available in a thermally-enhanced package with earless flanges and is ideal for use in multi-standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    PXAC192908FV
  • Manufacturer
    MACOM
  • Description
    240 W LDMOS FET from 1930 to 1995 MHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • CW/Pulse
    CW, Pulse
  • Frequency
    1930 to 1995 MHz
  • Power
    53.8 dBm
  • Power(W)
    239.88 W
  • P1dB
    120 W(Main), 220 W(Peak)
  • Gain
    13 to 14 dB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Drain Efficiency
    45 to 49 %
  • Drain Leakage Current (Id)
    1 to 10 uA
  • Gate Leakage Current (Ig)
    1 uA
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degrees C

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