CG2H80120D

RF Transistor by MACOM (310 more products)

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The CG2H80120D from MACOM is a GaNHEMT that operates from DC to 8 GHz. It provides a peak output power of 120 Watts with a small signal gain of 15 dB and has a drain efficiency of 65%. The device requires a 28 V supply and is available as a die. This RoHS-compliant transistor is ideal for 2-way private radios, broadband amplifiers, cellular infrastructure, test instrumentation, and class A, AB, linear amplifiers suitable for OFDM, W-CDMA, edge and CDMA waveforms.

Product Specifications

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Product Details

  • Part Number
    CG2H80120D
  • Manufacturer
    MACOM
  • Description
    120 W GaN HEMT from DC to 8 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Broadcast, Test & Measurement, Wireless Infrastructure
  • Application
    Radio, Test & Instrumentation, OFDM, 3G / WCDMA, EDGE, CDMA, Cellular
  • CW/Pulse
    CW
  • Frequency
    DC to 8 GHz
  • Power
    50.8 dBm
  • Power(W)
    120.23 W
  • Saturated Power
    120 W
  • Small Signal Gain
    12 to 15 dB
  • VSWR
    1.10:1
  • Class
    Class A, Class AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.8 to -2.3 V (Gate)
  • Voltage - Drain-Source (Vdss)
    120 V
  • Drain Efficiency
    0.65
  • Drain Current
    23.2 to 28 A
  • Feedback Capacitance
    1.5 pF
  • IMD
    -30 dBc
  • Input Capacitance
    31.2 pF
  • Junction Temperature (Tj)
    225 Degree C
  • On Resistance
    0.08 Ohms
  • Output Capacitance
    10.6 pF
  • Thermal Resistance
    0.8 to 1.39 °C/W
  • Package Type
    Die
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : -2.7 V, Gate Forward Voltage : 1.9 V

Technical Documents