Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to MACOM.
The CGH35015 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 3300 to 3900 MHz and can provide an output power of up to 15 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
800 W GaN Asymmetric Doherty Power Transistor from 600 to 1000 MHz
2.5 kW LDMOS Power Transistor from 1 to 400 MHz
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.
