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The CGH35030 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 3300 to 3900 MHz and can provide an output power of up to 30 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
800 W GaN Asymmetric Doherty Power Transistor from 600 to 1000 MHz
2.5 kW LDMOS Power Transistor from 1 to 400 MHz
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