The CGH40006S-AMP1 from MACOM is an unmatched GaN on SiC High Electron Mobility Transistor (HEMT) that operates up to 6 GHz. It provides a output power of 6 W with a small signal gain of over 11 dB and has an efficiency of up to 65%. The amplifier requires a DC supply of 28 V. It is available in a surface-mount plastic (QFN) package that measures 3 x 3 mm and has been designed for high efficiency, high gain, and wide bandwidth applications including 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and class A, AB, linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms.
