The CGHV14500 from MACOM is a GaN high-electron-mobility transistor (HEMT) that provides 530 watts of power from 0.5 to 1.8 GHz. The transistor has a drain efficiency of 68% and power gain of 16 dB. This GaN HEMT is available in a ceramic/metal flange and pill package and is ideal for for L-Band Radar Systems.
