Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to MACOM.
The CGHV22100 is a 100 W, Gallium Nitride (GaN) high electron mobility transistor (HEMT) that operates from 1800 MHz to 2200 MHz. The transistor has a gain of 20 dB and an efficiency of 31-35
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.
