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The CGHV22100 is a 100 W, Gallium Nitride (GaN) high electron mobility transistor (HEMT) that operates from 1800 MHz to 2200 MHz. The transistor has a gain of 20 dB and an efficiency of 31-35
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
800 W GaN Asymmetric Doherty Power Transistor from 600 to 1000 MHz
2.5 kW LDMOS Power Transistor from 1 to 400 MHz
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