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The CGHV22100 is a 100 W, Gallium Nitride (GaN) high electron mobility transistor (HEMT) that operates from 1800 MHz to 2200 MHz. The transistor has a gain of 20 dB and an efficiency of 31-35
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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