The CGHV3515 from MACOM is a GaN HEMT that operates from 2.9 to 3.5 GHz. The device provides a power gain of 13.5 dB with an efficiency of less than 50%. It delivers an output power of up to 180 W while operating at 50 V supply voltage. The transistor is available in a ceramic/metal flange or pill package and is ideal for S-Band radaramplifier applications.
