The CGHV35400F1 from MACOM is a GaN HEMT that operates from 2.9 to 3.5 GHz for S-band radar systems. It provides up to 500 W (57.1 dBm) of pulsed output power with a power gain of 11.1 dB and drain efficiency of up to 69%. The GaN HEMT has a duty cycle of 20% with 2 ms pulse lengths. It is based on MACOM’s high-power density 50 V, 0.4 μm GaN on silicon carbide (SiC) manufacturing process and has long pulse capability to meet the developing trends in radar architectures. The HEMT is available in a fully matched IMFET housed in a thermally enhanced ceramic/metal air cavity flange package. It is matched to 50 ohms and is ideal for civil and military pulsed radar amplifiers.
