Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to MACOM.
The CGHV37400F from MACOM is a GaN on SiC HEMT transistor that operates from 3.3 to 3.7 GHz. It provides an output power of 525 W with a power gain of 11.5 dB and drain efficiency of 55%. The transistor requires a supply voltage of 48 V and is matched to 50-ohms at the input and the output. The transistor is available in a metal/ceramic flanged package and ideal for S-Band radar amplifier applications.
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
800 W GaN Asymmetric Doherty Power Transistor from 600 to 1000 MHz
2.5 kW LDMOS Power Transistor from 1 to 400 MHz
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.
