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The CGHV37400F from MACOM is a GaN on SiC HEMT transistor that operates from 3.3 to 3.7 GHz. It provides an output power of 525 W with a power gain of 11.5 dB and drain efficiency of 55%. The transistor requires a supply voltage of 48 V and is matched to 50-ohms at the input and the output. The transistor is available in a metal/ceramic flanged package and ideal for S-Band radar amplifier applications.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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